Global Power Technology-GPT G5S6504Z
Manufacturer No: G5S6504Z
Manufacturer: Global Power Technology-GPT
Package: 8-PowerTDFN
Description: DIODE SIL CARB 650V 15.45A 8DFN
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Product Attributes Support
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (4.9x5.75)
- Mfr：Global Power Technology-GPT
- Package：Tape & Box (TB)
- Product Status：Active
- Qc(nC),TJ=25℃：10（VR=400V）
- Ifsm(A),Tc=25℃：24
- IF(A),Tc=25℃：12
- IF(A),Tc=125℃：5.7(135℃)
- IF(A),Tc=160℃：4（152℃）
- Vrrm(V)：650
- Config.：Single
- Ptot(W),Tc=110℃：22
- Ptot(W),Tc=25℃：52
- Series：-
- Speed：No Recovery Time > 500mA (Io)
- Diode Type：Silicon Carbide Schottky
- Current - Reverse Leakage @ Vr：50 μA @ 650 V
- Voltage - Forward (Vf) (Max) @ If：1.6 V @ 4 A
- Operating Temperature - Junction：-55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：15.45A
- Capacitance @ Vr, F：181pF @ 0V, 1MHz
- Reverse Recovery Time (trr)：0 ns
IN STOCK：0
Increments of:1
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Subtotal: $ 0.00000
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