Global Power Technology-GPT G4S06516BT
Manufacturer No: G4S06516BT
Manufacturer: Global Power Technology-GPT
Package: TO-247-3
Description: SIC SCHOTTKY DIODE 650V 16A 3-PI
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Product Attributes Support
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AB
- Mfr：Global Power Technology-GPT
- Package：Tape & Box (TB)
- Product Status：Active
- Current - Average Rectified (Io) (per Diode)：25.9A (DC)
- Ptot(W),Tc=25℃：
- Ptot(W),Tc=110℃：
- Config.：Double
- Vrrm(V)：650
- IF(A),Tc=160℃：8*(154.5℃)
- IF(A),Tc=125℃：12*(135℃)
- IF(A),Tc=25℃：
- Ifsm(A),Tc=25℃：
- Qc(nC),TJ=25℃：21（VR=400V）
- Series：-
- Speed：No Recovery Time > 500mA (Io)
- Diode Type：Silicon Carbide Schottky
- Current - Reverse Leakage @ Vr：50 μA @ 650 V
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 8 A
- Operating Temperature - Junction：-55°C ~ 175°C
- Voltage - DC Reverse (Vr) (Max)：650 V
- Diode Configuration：1 Pair Common Cathode
- Reverse Recovery Time (trr)：0 ns
IN STOCK：0
Increments of:1
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Subtotal: $ 0.00000
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